Soft sphere model for electron correlation and scattering in the atomistic modelling of semiconductor devices

Watling, J.R., Barker, J.R. and Asenov, A. (2000) Soft sphere model for electron correlation and scattering in the atomistic modelling of semiconductor devices. In: International Workshop on Computational Electronics, Glasgow, UK, 22-25 May 2000, pp. 159-160. ISBN 0852617046 (doi:10.1109/IWCE.2000.869974)



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The atomistic modelling of silicon MOSFET devices becomes essential at deep sub-micron scales when it is no longer possible to represent the charged impurities by a continuous charge distribution with a determined doping density. Instead the spatial distribution and the actual number of dopants must be treated as discrete random variables. The present paper addresses the issue of modelling the dynamics of discrete carrier flow in a semiconductor device utilising a simple model of the carrier-carrier scattering and carrier-fixed impurity scattering which is suitable for efficient simulations of large ensembles of devices.

Item Type:Conference Proceedings
Keywords:Atomistic, Device, Devices, Electron, Model, Scattering, Semiconductor, Semiconductor Devices, Semiconductor-Devices
Glasgow Author(s) Enlighten ID:Barker, Professor John and Watling, Dr Jeremy and Asenov, Professor Asen
Authors: Watling, J.R., Barker, J.R., and Asenov, A.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Publisher:Institute of Electrical and Electronics Engineers
Copyright Holders:Copyright © 2000 Institute of Electrical and Electronics Engineers
First Published:First published in 7th International Workshop on Computational Electronics (2000):159-160
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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