Watling, J.R., Barker, J.R., and Asenov, A. (2000) Soft sphere model for electron correlation and scattering in the atomistic modelling of semiconductor devices. In: International Workshop on Computational Electronics, 22-25 May 2000, Glasgow, UK.
Publisher's URL: http://dx.doi.org/10.1109/IWCE.2000.869974
The atomistic modelling of silicon MOSFET devices becomes essential at deep sub-micron scales when it is no longer possible to represent the charged impurities by a continuous charge distribution with a determined doping density. Instead the spatial distribution and the actual number of dopants must be treated as discrete random variables. The present paper addresses the issue of modelling the dynamics of discrete carrier flow in a semiconductor device utilising a simple model of the carrier-carrier scattering and carrier-fixed impurity scattering which is suitable for efficient simulations of large ensembles of devices.
|Item Type:||Conference Proceedings|
|Keywords:||Atomistic, Device, Devices, Electron, Model, Scattering, Semiconductor, Semiconductor Devices, Semiconductor-Devices|
|Glasgow Author(s):||Barker, Prof John and Watling, Dr Jeremy and Asenov, Prof Asen|
|Authors:||Watling, J.R., Barker, J.R., and Asenov, A.|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|College/School:||College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering|
|Research Group:||Device Modelling Group|
|Publisher:||Institute of Electrical and Electronics Engineers|
|Copyright Holders:||Copyright © 2000 Institute of Electrical and Electronics Engineers|
|First Published:||First published in 7th International Workshop on Computational Electronics (2000):159-160|
|Publisher Policy:||Reproduced in accordance with the copyright policy of the publisher|