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Indication of Non-equilibrium Transport in SiGe p-MOSFETs

Zhao, Y.P. et al. (2000) Indication of Non-equilibrium Transport in SiGe p-MOSFETs. In: 30th European Solid-State Device Research Conference, 11-13 September 2000, Cork, Ireland.

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Publisher's URL: http://ieeexplore.ieee.org/xpl/RecentCon.jsp?punumber=10059

Abstract

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s):Watling, Dr Jeremy and Asenov, Prof Asen
Authors: Zhao, Y.P., Kaya, S., Watling, J.R., Asenov, A., Barker, J.R., Palmer, M., Braithwaite, G., Whall, T.E., Parker, E.H.C., Waite, A., and Evans, A.G.R.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Publisher:Institute of Electrical and Electronics Engineers
Copyright Holders:Copyright © 2000 Institute of Electrical and Electronics Engineers
First Published:First published in proceedings of the 30th European Solid-State Device Research Conference (2000):224-227
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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