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Effect of impact ionization in scaled pHEMTs

Kalna, K., Asenov, A., Elgaid, K., and Thayne, I. (2000) Effect of impact ionization in scaled pHEMTs. In: 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications., 13-14 November 2000, Glasgow, UK.

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Publisher's URL: http://ieeexplore.ieee.org/xpl/RecentCon.jsp?punumber=7341

Abstract

The effect of impact ionization on pseudomorphic high electron mobility transistors is studied using Monte Carlo simulations when these devices are scaled into deep decanano dimensions. The scaling of devices with gate lengths of 120, 90, 70, 50 and 30 nm has been performed in both lateral and vertical directions. The impact ionization is treated as an additional scattering mechanism in the Monte Carlo module. The critical drain voltage, at which device characteristics begin to indicate breakdown, decreases as the gate voltage is lowered. Similarly, the breakdown drain voltage is also found to decrease during the scaling process.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Prof Iain and Elgaid, Dr Khaled and Asenov, Prof Asen and Kalna, Dr Karol
Authors: Kalna, K., Asenov, A., Elgaid, K., and Thayne, I.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Publisher:Institute of Electrical and Electronics Engineers
Copyright Holders:Copyright © 2000 Institute of Electrical and Electronics Engineers
First Published:First published in 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (2000):236-241
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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