Kalna, K., Asenov, A., Elgaid, K., and Thayne, I. (2000) Effect of impact ionization in scaled pHEMTs. In: 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications., 13-14 November 2000, Glasgow, UK.
Publisher's URL: http://ieeexplore.ieee.org/xpl/RecentCon.jsp?punumber=7341
The effect of impact ionization on pseudomorphic high electron mobility transistors is studied using Monte Carlo simulations when these devices are scaled into deep decanano dimensions. The scaling of devices with gate lengths of 120, 90, 70, 50 and 30 nm has been performed in both lateral and vertical directions. The impact ionization is treated as an additional scattering mechanism in the Monte Carlo module. The critical drain voltage, at which device characteristics begin to indicate breakdown, decreases as the gate voltage is lowered. Similarly, the breakdown drain voltage is also found to decrease during the scaling process.
|Item Type:||Conference Proceedings|
|Glasgow Author(s) Enlighten ID:||Thayne, Prof Iain and Elgaid, Dr Khaled and Asenov, Prof Asen and Kalna, Dr Karol|
|Authors:||Kalna, K., Asenov, A., Elgaid, K., and Thayne, I.|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|College/School:||College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering|
|Research Group:||Device Modelling Group|
|Publisher:||Institute of Electrical and Electronics Engineers|
|Copyright Holders:||Copyright © 2000 Institute of Electrical and Electronics Engineers|
|First Published:||First published in 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (2000):236-241|
|Publisher Policy:||Reproduced in accordance with the copyright policy of the publisher|