Asenov, A., and Kalna, K. (2000) Effect of oxide interface roughness on the threshold voltage fluctuations in decanano MOSFETs with ultrathin gate oxides. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2000), 6-8 September 2000, Seattle, Washington.
Publisher's URL: http://dx.doi.org/10.1109/SISPAD.2000.871226
In this paper we use the density gradient (DG) simulation approach to study, in 3D, the effect of local oxide thickness fluctuations on the threshold voltage of decanano MOSFETs on a statistical scale. The random 2D surfaces used to represent the interface are constructed using the standard assumptions for the auto-correlation function of the interface. The importance of the quantum mechanical effects when studying oxide thickness fluctuations are illustrated in several simulation examples.
|Item Type:||Conference Proceedings|
|Glasgow Author(s) Enlighten ID:||Asenov, Prof Asen|
|Authors:||Asenov, A., and Kalna, K.|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|College/School:||College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering|
|Research Group:||Device Modelling Group|
|Publisher:||Institute of Electrical and Electronics Engineers|
|Copyright Holders:||Copyright © 2000 Institute of Electrical and Electronics Engineers|
|First Published:||First published in International Conference on Simulation of Semiconductor Processes and Devices (2000):135-138|
|Publisher Policy:||Reproduced in accordance with the copyright policy of the publisher|