Enhanced velocity overshoot and transconductance in Si/Si(0.64)Ge(0.36)/Si pMOSFETs - predictions for deep submicron devices

Palmer, M.J. et al. (2001) Enhanced velocity overshoot and transconductance in Si/Si(0.64)Ge(0.36)/Si pMOSFETs - predictions for deep submicron devices. In: Solid State Device Research Conference, Nuremburg, Germany, 11-13 September 2001, pp. 199-202. ISBN 2914601010

Abstract

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• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Asenov, Professor Asen
• Authors: Palmer, M.J., Braithwaite, G., Prest, M.J., Parker, E.H.C., Whall, T.E., Zhao, Y.P., Kaya, S., Watling, J.R., Asenov, A., Barker, J.R., Waite, A.M., and Evans, A.G.R.
• Subjects: T Technology > TJ Mechanical engineering and machinery
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Device Modelling Group
• Publisher: Institute of Electrical and Electronics Engineers
• ISBN: 2914601010
• Copyright Holders: Copyright © 2001 Institute of Electrical and Electronics Engineers
• First Published: First published in proceedings of the 31st European Solid-State Device Research Conference (2001):199-202
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher