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Tunnelling and impact ionization in scaled double doped PHEMTs

Kalna, K. and Asenov, A. (2002) Tunnelling and impact ionization in scaled double doped PHEMTs. In: 32nd European Solid-State Device Research Conference, Firenze, Italy, 24-26 September 2002, pp. 303-306. ISBN 8890084782

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Publisher's URL: http://ieeexplore.ieee.org/xpl/RecentCon.jsp?punumber=10060

Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Kalna, Dr Karol
Authors: Kalna, K., and Asenov, A.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Publisher:Institute of Electrical and Electronics Engineers
ISBN:8890084782
Copyright Holders:Copyright © 2002 Institute of Electrical and Electronics Engineers
First Published:First published in proceedings of the 32nd European Solid-State Device Research Conference(2002):303-306
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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