Integrating 'atomistic', intrinsic parameter fluctuations into compact model circuit analysis

Cheng, B.J., Roy, S., Roy, G. and Asenov, A. (2003) Integrating 'atomistic', intrinsic parameter fluctuations into compact model circuit analysis. In: 33rd Conference on European Solid-State Device Research. ESSDERC '03, Estoril, Portugal, 16-18 Sep 2003, pp. 437-440. ISBN 0780379993 (doi:10.1109/ESSDERC.2003.1256907)

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Publisher's URL: http://dx.doi.org/10.1109/ESSDERC.2003.1256907

Abstract

MOSFET parameter fluctuations, resulting from the 'atomistic' granular nature of matter, are predicted to be a critical roadblock to the scaling of devices in future electronic systems. A methodology is presented which allows compact model based circuit analysis tools to exploit the results of 'atomistic' device simulation, allowing investigation of the effects of such fluctuations on circuits and systems. The methodology is applied to a CMOS inverter, ring oscillator, and analogue NMOS current mirror as simple initial examples of its efficacy.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Roy, Dr Gareth and Asenov, Professor Asen and Cheng, Dr Binjie and Roy, Professor Scott
Authors: Cheng, B.J., Roy, S., Roy, G., and Asenov, A.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Research Group:Device Modelling Group
Publisher:Institute of Electrical and Electronics Engineers
ISBN:0780379993
Copyright Holders:Copyright © 2003 Institute of Electrical and Electronics Engineers
First Published:First published in ESSDERC '03 : Proceedings of the 33rd Conference on European Solid-State Device Research (2003):437-440
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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