Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications

Yang, L., Asenov, A., Borici, M., Watling, J. R., Barker, J. R., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2003) Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications. In: IEEE Conference on Electron Devices and Solid-State Circuits, Kowloon, Hong Kong, 16-18 December 2003, pp. 331-334. ISBN 0780377494 (doi:10.1109/EDSSC.2003.1283543)

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Publisher's URL: http://dx.doi.org/10.1109/EDSSC.2003.1283543

Abstract

Based on careful calibration in respect of 70 nm n-type strained Si channel S/SiGe modulation doped FETs (MODFETs) fabricated by Daimler Chrysler, numerical simulations have been used to study the impact of the device geometry and various doping strategies on device performance and linearity. The device geometry is sensitive to both RF performance and device linearity. Doped channel devices are found to be promising for high linearity applications. Trade-off design strategies are required for reconciling the demands of high device performance and high linearity simultaneously. The simulations also suggest that gate length scaling helps to achieve higher RF performance, but decreases the linearity.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Asenov, Professor Asen and Watling, Dr Jeremy and Elgaid, Dr Khaled and Roy, Professor Scott
Authors: Yang, L., Asenov, A., Borici, M., Watling, J. R., Barker, J. R., Roy, S., Elgaid, K., Thayne, I., and Hackbarth, T.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Publisher:Institute of Electrical and Electronics Engineers
ISBN:0780377494
Copyright Holders:Copyright © 2003 Institute of Electrical and Electronics Engineers
First Published:First published in IEEE Conference on Electron Devices and Solid-State Circuits (2003):331-334
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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