The impact of random doping effects on CMOS SRAM cell

Cheng, B., Roy, S. and Asenov, A. (2004) The impact of random doping effects on CMOS SRAM cell. In: 30th European Solid-State Circuits Conference (ESSCIRC 2004)., Leuven, Belgium, 21-23 September 2004, pp. 219-222. ISBN 0780384806 (doi:10.1109/ESSCIR.2004.1356657)

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Publisher's URL: http://dx.doi.org/10.1109/ESSCIR.2004.1356657

Abstract

The SRAM has a very constrained cell area and is consequently sensitive to the intrinsic parameter fluctuations ubiquitous in decananometer scale MOSFETs. Using a statistical circuit simulation methodology, which can fully collate intrinsic parameter fluctuation information into compact model sets, the impact of random device doping on 6-T SRAM static noise margins, and read and write characteristics are investigated in detail for well-scaled 35 nm physical gate length devices. We conclude that intrinsic parameter fluctuations will become a major limitation to further conventional MOSFET SRAM scaling.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen
Authors: Cheng, B., Roy, S., and Asenov, A.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Publisher:Institute of Electrical and Electronics Engineers
ISBN:0780384806
Copyright Holders:Copyright © 2004 Institute of Electrical and Electronics Engineers
First Published:First published in ESSCIRC 2004 : Proceedings of the 10th International Workshop on Computational Electronics (2004):159-160
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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