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Speckbacher, P., Asenov, A., Bollu, M., Koch, F., and Weber, W. (1990) Hot-carrier-induced deep-level defects from gated-diode measurements on MOSFETs. IEEE Electron Device Letters, 11 (2). pp. 95-97. ISSN 0741-3106 (doi:10.1109/55.46940)
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hotcarrier_induced_deeplevel.pdf 252Kb |
Publisher's URL: http://dx.doi.org/10.1109/55.46940
Abstract
The reverse-bias current in the gated-diode configuration of hot-carrier degraded MOS devices was measured. It is shown that interface defects created by the degradation contribute predominantly to the generation current. The spatial distribution of the deep-level defects was obtained by means of device simulation.
| Item Type: | Article |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s): | Asenov, Prof Asen |
| Authors: | Speckbacher, P., Asenov, A., Bollu, M., Koch, F., and Weber, W. |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Research Group: | Device Modelling Group |
| Journal Name: | IEEE Electron Device Letters |
| Publisher: | Institute of Electrical and Electronics Engineers |
| ISSN: | 0741-3106 |
| ISSN (Online): | 1558-0563 |
| Copyright Holders: | Copyright © 1990 Institute of Electrical and Electronics Engineers |
| First Published: | First published in IEEE Electron Device Letters 11(2):95-97 |
| Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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