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Hot-carrier-induced deep-level defects from gated-diode measurements on MOSFETs

Speckbacher, P., Asenov, A., Bollu, M., Koch, F., and Weber, W. (1990) Hot-carrier-induced deep-level defects from gated-diode measurements on MOSFETs. IEEE Electron Device Letters, 11 (2). pp. 95-97. ISSN 0741-3106 (doi:10.1109/55.46940)

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Publisher's URL: http://dx.doi.org/10.1109/55.46940

Abstract

The reverse-bias current in the gated-diode configuration of hot-carrier degraded MOS devices was measured. It is shown that interface defects created by the degradation contribute predominantly to the generation current. The spatial distribution of the deep-level defects was obtained by means of device simulation.

Item Type:Article
Status:Published
Refereed:Yes
Glasgow Author(s):Asenov, Prof Asen
Authors: Speckbacher, P., Asenov, A., Bollu, M., Koch, F., and Weber, W.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Journal Name:IEEE Electron Device Letters
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0741-3106
ISSN (Online):1558-0563
Copyright Holders:Copyright © 1990 Institute of Electrical and Electronics Engineers
First Published:First published in IEEE Electron Device Letters 11(2):95-97
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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