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A diode device combining lateral field-effect transport and vertical tunneling in a multi-quantum-well heterostructure

Marczewski, J., Zachau, M., Asenov, A., Koch, F., and Gruetzmacher, D. (1992) A diode device combining lateral field-effect transport and vertical tunneling in a multi-quantum-well heterostructure. IEEE Electron Device Letters, 13 (6). pp. 338-340. ISSN 0741-3106 (doi:10.1109/55.145077)

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Publisher's URL: http://dx.doi.org/10.1109/55.145077

Abstract

The authors discuss an electronic device with asymmetric contacts to a InGaAs-InP multilayer heterostructure. Current enters via an alloyed ohmic contact into the quantum wells (QWs) and flows laterally along capacitively coupled channels. It leaves via tunneling between the layers and through a forward-biased surface Schottky contact. A step-like I-V dependence is observed and interpreted by a model calculation.

Item Type:Article
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Prof Asen
Authors: Marczewski, J., Zachau, M., Asenov, A., Koch, F., and Gruetzmacher, D.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Journal Name:IEEE Electron Device Letters
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0741-3106
ISSN (Online):1558-0563
Copyright Holders:Copyright © 1992 Institute of Electrical and Electronics Engineers
First Published:First published in IEEE Electron Device Letters 13(6):338-340
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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