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The 'gated-diode' configuration in MOSFET's, a sensitive tool for characterizing hot-carrier degradation

Speckbacher, P., Berger, J., Asenov, A., Koch, D., and Weber, W. (1995) The 'gated-diode' configuration in MOSFET's, a sensitive tool for characterizing hot-carrier degradation. IEEE Transactions on Electron Devices, 42 (7). pp. 1287-1296. ISSN 0018-9383 (doi:10.1109/16.391211)

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Publisher's URL: http://dx.doi.org/10.1109/16.391211

Abstract

This paper describes a new measurement technique, the forward gated-diode current characterized at low drain voltages to be applied in MOSFET's for investigating hot-carrier stress-induced defects at high spatial resolution. The generation/recombination current in the drain-to-substrate diode as a function of gate voltage, combined with two-dimensional numerical simulation, provides a sensitive tool for detecting the spatial distribution and density of interface defects. In the case of strong accumulation, additional information is obtained from interband tunneling processes occurring via interface defects. The various mechanisms for generating interface defects and fixed charges at variable stress conditions are discussed, showing that information complementary to that available from other methods is obtained

Item Type:Article
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Prof Asen
Authors: Speckbacher, P., Berger, J., Asenov, A., Koch, D., and Weber, W.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Journal Name:IEEE Transactions on Electron Devices
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0018-9383
Copyright Holders:Copyright © 1995 Institute of Electrical and Electronics Engineers
First Published:First published in IEEE Transactions on Electron Devices 42(7):1287-1296
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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