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Babiker, S., Asenov, A., Cameron, N., and Beaumont, S.P. (1996) Simple approach to include external resistances in the Monte Carlo simulation of MESFETs and HEMTs. IEEE Transactions on Electron Devices, 43 (11). pp. 2032-2034. ISSN 0018-9383 (doi:10.1109/16.543047)
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simple_approach_exrisis.pdf 372Kb |
Publisher's URL: http://dx.doi.org/10.1109/16.543047
Abstract
The contact and external series resistances play an important role in the performance of modern 0.1-0.2 μm HEMT's. It is not possible to include these resistances directly into the Monte Carlo simulations. Here we describe a simple and efficient way to include the external series resistances into the Monte Carlo results of the intrinsic device simulations. Examples of simulation results are given for a 0.2 μm pseudomorphic HEMT.
| Item Type: | Article |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s): | Beaumont, Prof Steven and Asenov, Prof Asen |
| Authors: | Babiker, S., Asenov, A., Cameron, N., and Beaumont, S.P. |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Research Group: | Device Modelling Group |
| Journal Name: | IEEE Transactions on Electron Devices |
| Publisher: | Institute of Electrical and Electronics Engineers |
| ISSN: | 0018-9383 |
| Copyright Holders: | Copyright © 1996 Institute of Electrical and Electronics Engineers |
| First Published: | First published in IEEE Transactions on Electron Devices 43(11):pp. 2032-2034 |
| Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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