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Simple approach to include external resistances in the Monte Carlo simulation of MESFETs and HEMTs

Babiker, S., Asenov, A., Cameron, N., and Beaumont, S.P. (1996) Simple approach to include external resistances in the Monte Carlo simulation of MESFETs and HEMTs. IEEE Transactions on Electron Devices, 43 (11). pp. 2032-2034. ISSN 0018-9383 (doi:10.1109/16.543047)

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Publisher's URL: http://dx.doi.org/10.1109/16.543047

Abstract

The contact and external series resistances play an important role in the performance of modern 0.1-0.2 μm HEMT's. It is not possible to include these resistances directly into the Monte Carlo simulations. Here we describe a simple and efficient way to include the external series resistances into the Monte Carlo results of the intrinsic device simulations. Examples of simulation results are given for a 0.2 μm pseudomorphic HEMT.

Item Type:Article
Status:Published
Refereed:Yes
Glasgow Author(s):Beaumont, Prof Steven and Asenov, Prof Asen
Authors: Babiker, S., Asenov, A., Cameron, N., and Beaumont, S.P.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Journal Name:IEEE Transactions on Electron Devices
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0018-9383
Copyright Holders:Copyright © 1996 Institute of Electrical and Electronics Engineers
First Published:First published in IEEE Transactions on Electron Devices 43(11):pp. 2032-2034
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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