Ternent, G., Asenov, A., Thayne, I.G., MacIntyre, D.S., Thom, S. and Wilkinson, C.D.W. (1999) SiGe p-channel MOSFETs with tungsten gate. Electronics Letters, 35(5), pp. 430-431. (doi: 10.1049/el:19990305)
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siGe_p-channel.pdf 293kB |
Publisher's URL: http://dx.doi.org/10.1049/el:19990305
Abstract
A self-aligned SiGe p-channel MOSFET tungsten gate process with 0.1 μm resolution is demonstrated. Interface charge densities of MOS capacitors realised with the low pressure sputtered tungsten process are comparable with thermally evaporated aluminium gate technologies (5×1010cm-2 and 2×1011 cm -2 for W and Al, respectively). Initial results from 1 μm gate length SiGe p-channel MOSFETs using the tungsten-based process show devices with a transconductance of 33 mS/mm and effective channel mobility of 190 cm2
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Ternent, Dr Gary and Asenov, Professor Asen |
Authors: | Ternent, G., Asenov, A., Thayne, I.G., MacIntyre, D.S., Thom, S., and Wilkinson, C.D.W. |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Research Group: | Device Modelling Group |
Journal Name: | Electronics Letters |
Publisher: | The Institution of Engineering & Technology |
ISSN: | 0013-5194 |
ISSN (Online): | 1350-911X |
Copyright Holders: | Copyright |
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