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SiGe p-channel MOSFETs with tungsten gate

Ternent, G., Asenov, A., Thayne, I.G., MacIntyre, D.S., Thom, S., and Wilkinson, C.D.W. (1999) SiGe p-channel MOSFETs with tungsten gate. Electronics Letters, 35 (5). pp. 430-431. ISSN 0013-5194 (doi:10.1049/el:19990305)

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Publisher's URL: http://dx.doi.org/10.1049/el:19990305

Abstract

A self-aligned SiGe p-channel MOSFET tungsten gate process with 0.1 μm resolution is demonstrated. Interface charge densities of MOS capacitors realised with the low pressure sputtered tungsten process are comparable with thermally evaporated aluminium gate technologies (5×1010cm-2 and 2×1011 cm -2 for W and Al, respectively). Initial results from 1 μm gate length SiGe p-channel MOSFETs using the tungsten-based process show devices with a transconductance of 33 mS/mm and effective channel mobility of 190 cm2

Item Type:Article
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Prof Iain and Ternent, Dr Gary and Asenov, Prof Asen
Authors: Ternent, G., Asenov, A., Thayne, I.G., MacIntyre, D.S., Thom, S., and Wilkinson, C.D.W.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Journal Name:Electronics Letters
Publisher:The Institution of Engineering & Technology
ISSN:0013-5194
ISSN (Online):1350-911X
Copyright Holders:Copyright

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