Kaya, S., Asenov, A. and Roy, S. (2002) Breakdown of universal mobility curves in sub-100-nm MOSFETs. IEEE Transactions on Nanotechnology, 1(4), pp. 260-264. (doi: 10.1109/TNANO.2002.807385)
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Publisher's URL: http://dx.doi.org/10.1109/TNANO.2002.807385
Abstract
We explore the breakdown of universal mobility behavior in sub-100-nm Si MOSFETs, using a novel three-dimensional (3-D) statistical simulation approach. In this approach, carrier trajectories in the bulk are treated via 3-D Brownian dynamics, while the carrier-interface roughness scattering is treated using a novel empirical model.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen and Roy, Professor Scott |
Authors: | Kaya, S., Asenov, A., and Roy, S. |
Subjects: | T Technology > T Technology (General) |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Research Group: | Device Modelling Group |
Journal Name: | IEEE Transactions on Nanotechnology |
Publisher: | Institute of Electrical and Electronics Engineers |
ISSN: | 1536-125X |
Copyright Holders: | Copyright © 2002 Institute of Electrical and Electronics Engineers |
First Published: | First published in IEEE Transactions on Nanotechnology 1(4):260-264 |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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