Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter

Brown, A.R., Asenov, A. and Watling, J.R. (2002) Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter. IEEE Transactions on Nanotechnology, 1(4), pp. 195-200. (doi:10.1109/TNANO.2002.807392)

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Publisher's URL: http://dx.doi.org/10.1109/TNANO.2002.807392

Abstract

We study, using numerical simulation, the intrinsic parameter fluctuations in sub 10 nm gate length double gate MOSFETs introduced by discreteness of charge and atomicity of matter. The employed "atomistic" drift-diffusion simulation approach includes quantum corrections based on the density gradient formalism. The quantum confinement and source-to-drain tunnelling effects are carefully calibrated in respect of self-consistent Poisson-Schrodinger and nonequilibrium Green's function simulations. Various sources of intrinsic parameter fluctuations, including random discrete dopants in the source/drain regions, single dopant or charged defect state in the channel region and gate line edge roughness, are studied in detail.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Watling, Dr Jeremy and Asenov, Professor Asen
Authors: Brown, A.R., Asenov, A., and Watling, J.R.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Journal Name:IEEE Transactions on Nanotechnology
Publisher:Institute of Electrical and Electronics Engineers
ISSN:1536-125X
Copyright Holders:Copyright © 2002 Institute of Electrical and Electronics Engineers
First Published:First published in IEEE Transactions on Nanotechnology 1(4):195-200
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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