Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter

Brown, A.R., Asenov, A. and Watling, J.R. (2002) Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter. IEEE Transactions on Nanotechnology, 1(4), pp. 195-200. (doi:10.1109/TNANO.2002.807392)

Abstract

We study, using numerical simulation, the intrinsic parameter fluctuations in sub 10 nm gate length double gate MOSFETs introduced by discreteness of charge and atomicity of matter. The employed "atomistic" drift-diffusion simulation approach includes quantum corrections based on the density gradient formalism. The quantum confinement and source-to-drain tunnelling effects are carefully calibrated in respect of self-consistent Poisson-Schrodinger and nonequilibrium Green's function simulations. Various sources of intrinsic parameter fluctuations, including random discrete dopants in the source/drain regions, single dopant or charged defect state in the channel region and gate line edge roughness, are studied in detail.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Watling, Dr Jeremy and Asenov, Professor Asen
• Authors: Brown, A.R., Asenov, A., and Watling, J.R.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Device Modelling Group
• Journal Name: IEEE Transactions on Nanotechnology
• Publisher: Institute of Electrical and Electronics Engineers
• ISSN: 1536-125X
• Copyright Holders: Copyright © 2002 Institute of Electrical and Electronics Engineers
• First Published: First published in IEEE Transactions on Nanotechnology 1(4):195-200
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher