RTS amplitudes in decananometer MOSFETs: 3-D simulation study

Asenov, A., Balasubramaniam, R., Brown, A.R. and Davies, J.H. (2003) RTS amplitudes in decananometer MOSFETs: 3-D simulation study. IEEE Transactions on Electron Devices, 50(3), pp. 839-845. (doi: 10.1109/TED.2003.811418)

Abstract

In this paper we study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single electron in defect states at the Si/SiO/sub 2/ interface of sub-100-nm (decananometer) MOSFETs employing three-dimensional (3-D) "atomistic" simulations. Both continuous doping charge and random discrete dopants in the active region of the MOSFETs are considered in the simulations. The dependence of the RTS amplitudes on the position of the trapped charge in the channel and on device design parameters such as dimensions, oxide thickness and channel doping concentration is studied in detail. The 3-D simulations offer a natural explanation for the large variation in the RTS amplitudes measured experimentally in otherwise identical MOSFETs. The random discrete dopant simulations result in RTS amplitudes several times higher compared to continuous charge simulations. They also produce closer to the experimentally observed distributions of the RTS amplitudes. The results highlight the significant impact of single charge trapping in the next generation decananometer MOSFETs.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Asenov, Professor Asen
• Authors: Asenov, A., Balasubramaniam, R., Brown, A.R., and Davies, J.H.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Device Modelling Group
• Journal Name: IEEE Transactions on Electron Devices
• Publisher: Institute of Electrical and Electronics Engineers
• ISSN: 0018-9383
• Copyright Holders: Copyright © 2003 Institute of Electrical and Electronics Engineers
• First Published: First published in IEEE Transactions on Electron Devices 50(3):839-845
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher