Ding, Y., Liu, J.S., MacLaren, I. and Wang, Y.N. (2001) Ferroelectric switching mechanism in SrBi2Ta2O9. Applied Physics Letters, 79(7), pp. 1015-1017. (doi: 10.1063/1.1395522)
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Abstract
The ferroelectric switching mechanism in strontium bismuth tantalate [SrBi2Ta2O9[SrBi2Ta2O9 (SBT)] has been studied using in situ transmission electron microscopy observations of the nucleation and growth of polarization domains, such as 180° and 90° domains. Thank to this high density of the antiphase boundary (APB), a switching mechanism in SBT based on the nucleation of new polarization domains at APBs as well as the electrode interfaces put forward and the fatigue-free behavior of SBT with a platinum electrode is explained.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | MacLaren, Dr Ian |
| Authors: | Ding, Y., Liu, J.S., MacLaren, I., and Wang, Y.N. |
| College/School: | College of Science and Engineering > School of Physics and Astronomy |
| Journal Name: | Applied Physics Letters |
| Publisher: | AIP Publishing |
| ISSN: | 0003-6951 |
| ISSN (Online): | 1077-3118 |
| Published Online: | 01 August 2001 |
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