Mechanical dissipation in silicon flexures

Reid, S., Cagnoli, G., Crooks, D.R.M., Hough, J., Murray, P., Rowan, S., Fejer, M.M., Route, R. and Zappe, S. (2006) Mechanical dissipation in silicon flexures. Physics Letters A, 351, pp. 205-211. (doi:10.1016/j.physleta.2005.10.103)

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Abstract

The thermo-mechanical properties of silicon make it of significant interest as a possible material for mirror substrates and suspension elements for future long-baseline gravitational wave detectors. The mechanical dissipation in 92 μm thick 〈110〉 single-crystal silicon cantilevers has been observed over the temperature range 85 K to 300 K, with dissipation approaching levels down to ϕ=4.4×10−7.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Cagnoli, Dr Gianpietro and Rowan, Professor Sheila and Reid, Professor Stuart and Crooks, Dr David and Hough, Professor James and Murray, Dr Peter
Authors: Reid, S., Cagnoli, G., Crooks, D.R.M., Hough, J., Murray, P., Rowan, S., Fejer, M.M., Route, R., and Zappe, S.
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Physics Letters A
Publisher:Elsevier BV
ISSN:0375-9601
ISSN (Online):1873-2429
Published Online:08 November 2005

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