Nano-characterisation of dielectric breakdown in the various advanced gate stack MOSFETs

Pey, K., Tung, C., Ranjan, R., Lo, V., MacKenzie, M. and Craven, A. (2007) Nano-characterisation of dielectric breakdown in the various advanced gate stack MOSFETs. International Journal of Nanotechnology, 4, pp. 347-376.

Full text not currently available from Enlighten.


Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Craven, Professor Alan
Authors: Pey, K., Tung, C., Ranjan, R., Lo, V., MacKenzie, M., and Craven, A.
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:International Journal of Nanotechnology

University Staff: Request a correction | Enlighten Editors: Update this record