Double-barrier magnetic tunnel junctions with GeSbTe thermal barriers for improved thermally assisted magnetoresistive random access memory cells

Cardoso, S., Ferreira, R., Silva, F., Freitas, P., Melo, L., Sousa, R., Redon, O., MacKenzie, M. and Chapman, J. (2006) Double-barrier magnetic tunnel junctions with GeSbTe thermal barriers for improved thermally assisted magnetoresistive random access memory cells. Journal of Applied Physics, 99, (doi:10.1063/1.2162813)

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Chapman, Professor John
Authors: Cardoso, S., Ferreira, R., Silva, F., Freitas, P., Melo, L., Sousa, R., Redon, O., MacKenzie, M., and Chapman, J.
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Journal of Applied Physics

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