High Performance of AlGaN/GaN HEMTs using Buffer-Free GaN on SiC Structure

Dhongde, A., Taking, S., Elksne, M. , Ofiare, A., Karami, K. , Dwidar, M., Al-Khalidi, A. and Wasige, E. (2022) High Performance of AlGaN/GaN HEMTs using Buffer-Free GaN on SiC Structure. 45th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits, Ponta Delgada (São Miguel island – Azores), Portugal, 3-6 May 2022.

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271905.pdf - Accepted Version



This paper reports on the processing and device characteristics of AlGaN/GaN high electron mobility transistors using buffer-free GaN grown on SiC substrate. This new concept of thin AlGaN/GaN heterostructure (<330nm of epitaxial layers) as compared to a conventional structure with a thick GaN buffer layer (>2-3μm). As-grown epitaxial structure provides a twodimensional electron gas (2DEG), ns, of 1 x 1013 cm-2 , an electron mobility, µ, of > 2000 cm2 /V.s, and sheet resistance, Rsh, of 330 Ω/□. The fabricated AlGaN/GaN HEMT buffer-free GaN with a 3-μm gate long, two-finger 2 × 50 µm wide device demonstrates a maximum drain current density of 801 mA/mm at VGS = 2 V and maximum peak transconductance of 189 mS/mm at VDS = 5 V. This device also produces low gate leakage currents of IGS = 2.1x10-4 A/mm at VGS = -10 V and a breakdown voltage, VBR, of over 200 V. The maximum cut-off frequency, fT, and maximum oscillation frequency, fmax, of 4.7 GHz and 9.4 GHz were obtained respectively. These results indicate the potential of using buffer-free GaN heterostructure for future high power high frequency applications.

Item Type:Conference or Workshop Item
Glasgow Author(s) Enlighten ID:Karami, Mr Kaivan and Taking, Dr Sanna and Ofiare, Dr Afesomeh and Al-Khalidi, Dr Abdullah and Wasige, Professor Edward and Dwidar, Mahmud and Elksne, Mrs Maira and Dhongde, Aniket
Authors: Dhongde, A., Taking, S., Elksne, M., Ofiare, A., Karami, K., Dwidar, M., Al-Khalidi, A., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2022 The Authors
Publisher Policy:Reproduced with the permission of the Publisher
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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
301178Novel GaN Power Devices and Packaging Technologies for 300 degC Ambient OperationEdward WasigeEngineering and Physical Sciences Research Council (EPSRC)EP/R024413/1ENG - Electronics & Nanoscale Engineering