Accurate quantum transport modeling of high-speed In 0.53 Ga 0.47 As/AlAs double-barrier resonant tunneling diodes

Cimbri, D. , Yavas-Aydin, B., Hartmann, F., Jabeen, F., Worschech, L., Höfling, S. and Wasige, E. (2022) Accurate quantum transport modeling of high-speed In 0.53 Ga 0.47 As/AlAs double-barrier resonant tunneling diodes. IEEE Transactions on Electron Devices, 69(8), pp. 4638-4645. (doi: 10.1109/TED.2022.3178360)

Abstract

In this article, we demonstrate a reliable physics-based simulation approach to accurately model high-speed In 0.53 Ga 0.47 As/AlAs double-barrier resonant tunneling diodes (RTDs). It relies on the nonequilibrium Green’s function (NEGF) formalism implemented in SILVACO Atlas TCAD quantum simulation package to closely mimic the actual device physics, together with the judicious choice of the material parameters, models, and suitable discretization of the associated epitaxial layer structure. The validity of the approach was proved by comparing simulated data with experimental measurements resulting from fabricated micrometer-sized RTD devices featuring two different epitaxially grown layer stacks. Our results show that the simulation software can correctly compute the peak current density J p , peak voltage V p , and the valley-to-peak voltage difference Δ V = V v − V p associated with the negative differential resistance (NDR) region of the RTD heterostructure static current density–voltage (J–V) characteristic at room temperature (RT), all of which are key parameters in the design of these devices for use in oscillator circuits. We believe that this work will now help in optimizing the RTD epitaxial structure to maximize its radio-frequency (RF) power performance, accelerating developments in the rapidly evolving RTD technology for emerging applications, including next-generation ultra-broadband short-range wireless communication links and high-resolution imaging systems.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Wasige, Professor Edward and Cimbri, Mr Davide
• Authors: Cimbri, D., Yavas-Aydin, B., Hartmann, F., Jabeen, F., Worschech, L., Höfling, S., and Wasige, E.
• College/School: College of Science and Engineering > School of Engineering; College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE Transactions on Electron Devices
• Publisher: IEEE
• ISSN: 0018-9383
• ISSN (Online): 1557-9646
• Published Online: 08 June 2022
• Copyright Holders: Copyright © 2022 IEEE
• First Published: First published in IEEE Transactions on Electron Devices 69(8):4638-4645
• Publisher Policy: Reproduced in accordance with the publisher copyright policy