Epitaxial Structure Simulation Study of In0.53Ga0.47As/AlAs Double-Barrier Resonant Tunnelling Diodes

Cimbri, D. , Wang, J. and Wasige, E. (2022) Epitaxial Structure Simulation Study of In0.53Ga0.47As/AlAs Double-Barrier Resonant Tunnelling Diodes. In: 2022 Fifth IEEE International Workshop on Mobile Terahertz Systems (IWMTS), Duisburg, Germany, 04-06 Jul 2022, (Accepted for Publication)

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Abstract

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Item Type:Conference Proceedings
Status:Accepted for Publication
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Wang, Dr Jue and Cimbri, Mr Davide
Authors: Cimbri, D., Wang, J., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
302077Doctoral Training Network in Terahertz Technologies for Imaging, Radar and Communication ApplicationsEdward WasigeEuropean Commission (EC)N/AENG - Electronics & Nanoscale Engineering