Statistical device simulations of III-V nanowire resonant tunneling diodes as physical unclonable functions source

Rezaei, A., Maciazek, P., Sengupta, A. , Dutta, T. , Medina-Bailon, C., Asenov, A. and Georgiev, V. P. (2022) Statistical device simulations of III-V nanowire resonant tunneling diodes as physical unclonable functions source. Solid-State Electronics, 194, 108339. (doi: 10.1016/j.sse.2022.108339)

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Abstract

In this paper, utilising the non-equilibrium Green’s function (NEGF) formalism within the new device simulator NESS (Nano-Electronic Software Simulator) developed at the University of Glasgow’s Device Modelling Group, we present quantum mechanical simulations of current flow in double-barrier III-V GaAs-AlGaAs nanowire resonant tunneling diodes (RTDs). NESS is a fast and modular Technology Computer Aided Design (TCAD) tool with flexible architecture which can take into account various sources of statistical variability in nanodevices. The aim of this work is to show that, in the RTD devices with nano-scale dimensions, there is a direct correlation between the position and the numbers of random dopants and the key device parameters, e.g., position of the resonant-peak (VR) variations as well as the shape and number of peaks in the output current-voltage (I-V) characteristics. Such VR variability can be used as a quantum fingerprint which can provide robust security and hence can be used to deliver Physical Unclonable Functions (PUFs).

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Dutta, Dr Tapas and Medina Bailon, Miss Cristina and Rezaei, Dr Ali and Sengupta, Dr Amretashis and Georgiev, Dr Vihar
Authors: Rezaei, A., Maciazek, P., Sengupta, A., Dutta, T., Medina-Bailon, C., Asenov, A., and Georgiev, V. P.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Engineering > Systems Power and Energy
Journal Name:Solid-State Electronics
Publisher:Elsevier
ISSN:0038-1101
ISSN (Online):1879-2405
Published Online:28 April 2022
Copyright Holders:Copyright © 2022 The Authors
First Published:First published in Solid-State Electronics 194: 108339
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
302377Quantum Simulator for Entangled Electronics (QSEE)Vihar GeorgievEngineering and Physical Sciences Research Council (EPSRC)EP/S001131/1ENG - Electronics & Nanoscale Engineering
173715Quantum Electronics Device Modelling (QUANTDEVMOD)Vihar GeorgievEngineering and Physical Sciences Research Council (EPSRC)EP/P009972/1ENG - Electronics & Nanoscale Engineering