Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters

Haws, C. , Guha, B., Perez, E., Davanco, M., Song, J. D., Srinivasan, K. and Sapienza, L. (2022) Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters. Materials for Quantum Technology, 2(2), 025003. (doi: 10.1088/2633-4356/ac603e)

Abstract

The ability to combine different materials enables a combination of complementary properties and device engineering that cannot be found or exploited within a single material system. In the realm of quantum nanophotonics, one might want to increase device functionality by, for instance, combining efficient classical and quantum light emission available in III–V semiconductors, low-loss light propagation accessible in silicon-based materials, fast electro-optical properties of lithium niobate, and broadband reflectors and/or buried metallic contacts for local electric field application or electrical injection of emitters. However, combining different materials on a single wafer is challenging and may result in low reproducibility and/or low yield. For instance, direct epitaxial growth requires crystal lattice matching for producing of defect-free films, and wafer bonding requires considerable and costly process development for high bond strength and yield. We propose a transfer printing technique based on the removal of arrays of free-standing membranes and their deposition onto a host material using a thermal release adhesive tape-assisted process. This approach is versatile, in that it poses limited restrictions on the transferred and host materials. In particular, we transfer 190 nm-thick GaAs membranes that contain InAs quantum dots and which have dimensions up to about 260 μm × 80 μm onto a gold-coated silicon substrate. We show that the presence of a back reflector combined with the etching of micropillars significantly increases the extraction efficiency of quantum light from a single quantum dot line, reaching photon fluxes exceeding 8 × 105 photons per second. This flux is four times higher than the highest count rates measured from emitters outside the pillars on the same chip. Given its versatility and ease of processing, this technique provides a path to realising hybrid quantum nanophotonic devices that combine virtually any material in which free-standing membranes can be made onto any host substrate, without specific compatibility issues and/or requirements.

• Item Type: Articles
• Additional Information: LS acknowledges financial support by the Leverhulme Trust, Grant IAF-2019-013. JDS acknowledges financial support from IITP Grant 2020-0-00841, funded by MSIT.
• Keywords: Quantum dots, hybrid quantum photonic devices, single-photon emitters, integrated photonic devices, quantum light, photoluminescence spectroscopy, nanofabrication.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Haws, Cori and Sapienza, Dr Luca
• Authors: Haws, C., Guha, B., Perez, E., Davanco, M., Song, J. D., Srinivasan, K., and Sapienza, L.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Materials for Quantum Technology
• Publisher: IOP Publishing
• ISSN: 2633-4356
• ISSN (Online): 2633-4356
• Published Online: 19 April 2022
• Copyright Holders: Copyright © 2022 The Authors
• First Published: First published in Materials for Quantum Technology 2(2): 025003
• Publisher Policy: Reproduced under a Creative Commons License