High performance of n++GaN/AlN/GaN high electron mobility transistor

Karami, K. , Taking, S., Ofiare, A., Dhongde, A., Al-Khalidi, A. and Wasige, E. (2021) High performance of n++GaN/AlN/GaN high electron mobility transistor. 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE), Bristol, UK, 14-17 June 2021.

Abstract

In this work, we report the processing and DC performance of n++GaN/AlN/GaN high electron mobility transistors with a recessed gate structure. The n++GaN cap layer is selectively removed under the gate region using SF6/O2. The fabricated device shows a maximum drain current density of over 1000 mA/mm at VGS=+3 V and a maximum peak transconductance of 240 mS/mm at VDS=5 V. The breakdown voltage of the device is over 95 V. The measured contact resistance between 0.4 to 0.6 Ω.mm is obtained using circular TLM. These results indicate the potential of n++GaN/AlN/GaN HEMT structure to be used for future high frequency power application.

• Item Type: Conference or Workshop Item
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Wasige, Professor Edward and Dhongde, Aniket and Al-Khalidi, Dr Abdullah and Karami, Mr Kaivan and Taking, Dr Sanna and Ofiare, Dr Afesomeh
• Authors: Karami, K., Taking, S., Ofiare, A., Dhongde, A., Al-Khalidi, A., and Wasige, E.
• College/School: College of Science and Engineering; College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Copyright Holders: Copyright © The Author(s) 2021
• Publisher Policy: Reproduced with the permission of the publisher