THz Intersubband Emitter based on Silicon

Stark, D. et al. (2021) THz Intersubband Emitter based on Silicon. In: 27th International Semiconductor Laser Conference (ISLC 2021), Potsdam, Germany, 10-14 Oct 2021, ISBN 9781665430944 (doi: 10.1109/ISLC51662.2021.9615725)

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259744.pdf - Accepted Version



We present THz quantum cascade emitters realized on a Si substrate. The emission centered at 3.4 and 4.9 THz originates from L-valley transitions in strain-compensated n-type Ge/SiGe heterostructures. This is an important step towards the realization of Si-based THz quantum cascade lasers.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Mirza, Dr Muhammad M A and Paul, Professor Douglas
Authors: Stark, D., Mirza, M., Persichetti, L., Montanari, M., Markmann, S., Beck, M., Grange, T., Birner, S., Virgilio, M., Ciano, C., Ortolani, M., Corley, C., Capellini, G., Di Gaspare, L., De Seta, M., Paul, D. J., Faist, J., and Scalari, G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2021 IEEE
First Published:First published in 27th International Semiconductor Laser Conference (ISLC 2021)
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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