Zumeit, A. A. S., Dahiya, A. S. , Christou, A. and Dahiya, R. (2022) High performance p-channel transistors on flexible substrate using direct roll transfer stamping. Japanese Journal of Applied Physics, 61(SC), SC1042. (doi: 10.35848/1347-4065/ac40ab)
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Publisher's URL: https://doi.org/10.35848/1347-4065/ac40ab
Abstract
Flexible electronics with high-performance devices is crucial for transformative advances in several emerging and traditional applications. To address this need, herein we present p-type silicon (Si) nanoribbons (NR)-based high-performance field-effect transistors (FETs) developed using innovative Direct Roll Transfer Stamping (DRTS) process. First, ultrathin Si NRs (~70 nm) are obtained from silicon on insulator (SOI) wafers using conventional top-down method, and then DRTS method is employed to directly place the NRs onto flexible substrates at room temperature (RT). The NRFETs are then developed following RT fabrication process which include deposition of high-quality SiNx dielectric. The fabricated p-channel transistors demonstrate high linear mobility ~100±10 cm2/Vs, current on/off ratio >10^4, and low gate leakage (<1nA). Further, the transistors showed robust device performance under mechanical bending and at wide temperature range (15 to 90 °C), showing excellent potential for futuristic high-performance flexible electronic devices/circuits.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Zumeit, Ayoub and Dahiya, Dr Abhishek Singh and Christou, Mr Adamos and Dahiya, Professor Ravinder |
Authors: | Zumeit, A. A. S., Dahiya, A. S., Christou, A., and Dahiya, R. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Japanese Journal of Applied Physics |
Publisher: | IOP Publishing |
ISSN: | 0021-4922 |
ISSN (Online): | 1347-4065 |
Published Online: | 07 December 2021 |
Copyright Holders: | Copyright © 2021 The Author(s) |
First Published: | First published in Japanese Journal of Applied Physics 61(SC): SC1042 |
Publisher Policy: | Reproduced under a Creative Commons licence |
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