Understanding the role of tunneling barriers in organic spin valves by hard x-ray photoelectron spectroscopy

Borgatti, F., Bergenti, I., Bona, F., Dediu, V., Fondacaro, A., Huotari, S., Monaco, G., MacLaren, D.A., Chapman, J.N. and Panaccione, G. (2010) Understanding the role of tunneling barriers in organic spin valves by hard x-ray photoelectron spectroscopy. Applied Physics Letters, 96, 043306. (doi:10.1063/1.3285179)

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Abstract

We present an ex situ, nondestructive chemical characterization of deeply buried organic-inorganic interfaces using hard x-ray photoelectron spectroscopy. Co/Alq<sub>3</sub> and Co/AlO<sub>x</sub>/Alq<sub>3</sub> interfaces were studied in order to determine the role of a thin (1–2 nm) AlO<sub>x</sub> interdiffusion barrier in organic spin valves. Interfacial Alq<sub>3</sub>, 15 nm below the surface, exhibits strong sensitivity to the electronic structure of the interfacial region and to the presence of the AlO<sub>x</sub>. In addition to reducing Co–Alq<sub>3</sub> interdiffusion, we find that the barrier prevents charge donation from the Co to the interfacial Alq<sub>3</sub>, thus preventing the formation of Alq<sub>3</sub> anions within the interface region.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:MacLaren, Dr Donald and Chapman, Professor John
Authors: Borgatti, F., Bergenti, I., Bona, F., Dediu, V., Fondacaro, A., Huotari, S., Monaco, G., MacLaren, D.A., Chapman, J.N., and Panaccione, G.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Applied Physics Letters
Journal Abbr.:Appl. Phys. Lett.
ISSN:0003-6951
ISSN (Online):1077-3118

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