Evaluation of Material Profiles for III-V Nanowire Photodetectors

Martinez-Oliver, C., Moselund, K. E. and Georgiev, V. P. (2021) Evaluation of Material Profiles for III-V Nanowire Photodetectors. In: 2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 13-17 Sep 2021, pp. 39-40. ISBN 9781665412766 (doi: 10.1109/NUSOD52207.2021.9541533)

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Abstract

In this paper we report the simulation-based design of experiment (DoE) study for three different types of III-V based pin photodetectors operating at various wavelengths. Our DoE work shows that the optimal configuration for each device is strongly determined by the wavelength at which we are aiming to operate the photodetector and that a trade-off exists between low dark current and high photocurrent. Heterostructure devices provide the optimum performance in particular for longer wavelengths.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Georgiev, Dr Vihar and Martinez Oliver, Cristina
Authors: Martinez-Oliver, C., Moselund, K. E., and Georgiev, V. P.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:2158-3242
ISBN:9781665412766
Copyright Holders:Copyright © 2021 IEEE
First Published:First published in 2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD): 39-40
Publisher Policy:Reproduced in accordance with the publisher copyright policy
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