Colombelli, R., Piazza, V., Badolato, A. , Lazzarino, M. and Beltram, F. (2000) Conduction-band offset of single InAs monolayers on GaAs. Applied Physics Letters, 76(9), pp. 1147-1148. (doi: 10.1063/1.125965)
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Abstract
A determination of the InAs/GaAs band-offset energy is presented. Electronic-transport analysis, based on capacitance-voltage and deep-level transient spectroscopy techniques, demonstrates high crystalline quality of our sample and yields a band-offset estimate of 0.69 eV, corresponding to a band-offset ratio of 70÷30. The present results agree well with reported theoretical values and allow the accurate modeling of electronic states in GaAs/AlGaAs heterostructures containing InAs ultrathin layers.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Badolato, Professor Antonio |
| Authors: | Colombelli, R., Piazza, V., Badolato, A., Lazzarino, M., and Beltram, F. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| ISSN (Online): | 1077-3118 |
| Published Online: | 18 February 2000 |
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