Ohmic contacts optimisation for high-power InGaAs/AlAs double-barrier resonant tunnelling diodes based on a dual-exposure E-beam lithography approach

Cimbri, D. , Weimann, N., Al-Taai, Q. R. A., Ofiare, A. and Wasige, E. (2021) Ohmic contacts optimisation for high-power InGaAs/AlAs double-barrier resonant tunnelling diodes based on a dual-exposure E-beam lithography approach. International Journal of Nanoelectronics and Materials, (Accepted for Publication)

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Abstract

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Item Type:Articles
Status:Accepted for Publication
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Al-Taai, Dr Qusay Raghib Al and Ofiare, Dr Afesomeh and Cimbri, Mr Davide
Authors: Cimbri, D., Weimann, N., Al-Taai, Q. R. A., Ofiare, A., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:International Journal of Nanoelectronics and Materials
Publisher:Universiti Malaysia Perlis (UniMAP)
ISSN:1985-5761
ISSN (Online):1997-4434
Copyright Holders:Copyright © 2021 Universiti Malaysia Perlis (UniMAP)
First Published:First published in International Journal of Nanoelectronics and Materials 2021
Publisher Policy:Reproduced with the permission of the publisher

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