Proximity induced superconductivity in indium gallium arsenide quantum wells

Delfanazari, K. et al. (2018) Proximity induced superconductivity in indium gallium arsenide quantum wells. Journal of Magnetism and Magnetic Materials, 459, pp. 282-284. (doi: 10.1016/j.jmmm.2017.10.057)

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We report on the experimental observation of the proximity induced superconductivity in an indium gallium arsenide (In0.75Ga0.25As) quantum well. The Josephson junction was fabricated by several photo-lithographic processes on an InGaAs heterojunction and Niobium (Nb) was used as superconducting electrodes. Owing to the Andreev reflections and Andreev bound states at the Nb-In0.75Ga0.25As quantum well-Nb interfaces, the subharmonic energy gap structures (SGS) are observed at the differential conductance (dI/dV) versus voltage (V) plots when the applied source-drain bias voltages satisfy the expression VSD = 2Δ/ne. The dI/dV as a function of applied magnetic field B shows a maximum at zero B which decreases by increasing B. When decreasing B to below ±0.4 T, a hysteresis and shift of the conductance maxima close to B = 0 T are observed. Our results help to pave the way to the development of integrated coherent quantum circuitry.

Item Type:Articles
Additional Information:Authors acknowledge financial support from EPSRC grant numbers EP/M009505/1 and EP/J017671/1.
Glasgow Author(s) Enlighten ID:Delfanazari, Dr Kaveh
Authors: Delfanazari, K., Puddy, R.K., Ma, P., Yi, T., Cao, M., Gul, Y., Farrer, I., Ritchie, D.A., Joyce, H.J., Kelly, M.J., and Smith, C.G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Magnetism and Magnetic Materials
Publisher:Elsevier Science Publishers B.V.
ISSN (Online):0304-8853
Published Online:16 October 2017
Copyright Holders:Copyright © 2017 The Authors
First Published:First published in Journal of Magnetism and Magnetic Materials 459:282-284
Publisher Policy:Reproduced under a Creative Commons licence

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