Vali, M., Moezi, N., Heidari, H. and Bayani, A. (2021) A scheme of quantum tunnel field effect transistor based on armchair graphene nano-ribbon. ECS Journal of Solid State Science and Technology, 10(9), 091012. (doi: 10.1149/2162-8777/ac2329)
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Abstract
We proposed a scheme of armchair graphene nanoribbon (AGNR) based tunnel field-effect transistor (TFET). The simulated device consists of two (AGNR) electrodes with zigzag termination that are separated by a narrow gap. The Fermi level of two electrodes is controlled with a common back gate. The main idea is based on taking advantage of the electronic effects of smooth edge atoms of (AGNR) and investigatinge the effect of applied small uniaxial tensile strain and gate voltage on the output characteristics of simulated TFET. Our analysis shows that the simulated device will have a pronounced negative differential conductance high peak to valley ratio at room temperature. We see that by applying the uniaxial tensile strain, this ratio upgrades to 70 for (AGNR) with width N=13. Our analysis shows that the simulated device will have a pronounced negative differential conductance high peak to valley ratio (PVR) at room temperature. We see that by applying the uniaxial tensile strain, this ratio upgrades to 70 for (AGNR) with width N=13.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Heidari, Professor Hadi |
Authors: | Vali, M., Moezi, N., Heidari, H., and Bayani, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | ECS Journal of Solid State Science and Technology |
Publisher: | Electrochemical Society |
ISSN: | 2162-8769 |
ISSN (Online): | 2162-8777 |
Copyright Holders: | Copyright © 2021 The Electrochemical Society (“ECS”) |
First Published: | First published in ECS Journal of Solid State Science and Technology 10(9):091012 |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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