Cito, M., Kojima, O., Stevens, B. J., Mukai, T. and Hogg, R. A. (2021) Fitting of photoluminescence spectra for structural characterisation of high current density resonant tunnelling diodes for THz applications. In: SPIE OPTO, Online Only, California, United States, 6-12 March 2021, (doi: 10.1117/12.2582781)
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Abstract
High-resolution X-ray diffraction (HR-XRD), and low-temperature photoluminescence spectroscopy (LT-PL) are used to investigate the structural properties and inhomogeneities of high current density InGaAs/AlAs/InP resonant tunnelling diode (RTD) wafer structures. The non-destructive assessment of these structures is challenging, with structural variables: well and barriers thickness and the well indium molar fraction, in addition to electronic variables such as the band-offsets being functions of strain, growth sequence, etc.. Experimental PL data are compared with simulations allowing the deconvolution of the PL spectra, that includes Type I and Type II transitions broadened by interface fluctuations on length scales smaller and much larger than the exciton. This method provides details of the non-uniformity of the epitaxial material nondestructively.
Item Type: | Conference Proceedings |
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Additional Information: | Proceedings SPIE Volume 11685, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIV: 1168511. This project has received funding from the European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie under Grant Agreement No. 765426 (TeraApps). |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Cito, Mr Michele and Hogg, Professor Richard |
Authors: | Cito, M., Kojima, O., Stevens, B. J., Mukai, T., and Hogg, R. A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Copyright Holders: | Copyright © 2021 SPIE |
Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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