Medina-Bailon, C., Padilla, J. L., Sampedro, C., Donetti, L., Gergiev, V. P. , Gamiz, F. and Asenov, A. (2021) Self-consistent enhanced S/D tunneling implementation in a 2D MS-EMC nanodevice simulator. Micromachines, 12(6), 601. (doi: 10.3390/mi12060601)
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Abstract
The implementation of a source to drain tunneling in ultrascaled devices using MS-EMC has traditionally led to overestimated current levels in the subthreshold regime. In order to correct this issue and enhance the capabilities of this type of simulator, we discuss in this paper two alternative and self-consistent solutions focusing on different parts of the simulation flow. The first solution reformulates the tunneling probability computation by modulating the WKB approximation in a suitable way. The second corresponds to a change in the current calculation technique based on the utilization of the Landauer formalism. The results from both solutions are compared and contrasted to NEGF results from NESS. We conclude that the current computation modification constitutes the most suitable and advisable strategy to improve the MS-EMC tool.
Item Type: | Articles |
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Keywords: | Direct source-to-drain tunneling, tunneling probability, Landauer formalism, multi-subband ensemble Monte Carlo, non-equilibrium Green’s functions, DGSOI, FinFET. |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Georgiev, Professor Vihar and Asenov, Professor Asen |
Authors: | Medina-Bailon, C., Padilla, J. L., Sampedro, C., Donetti, L., Gergiev, V. P., Gamiz, F., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Micromachines |
Publisher: | MDPI |
ISSN: | 2072-666X |
ISSN (Online): | 2072-666X |
Published Online: | 22 May 2021 |
Copyright Holders: | Copyright © 2021 The Authors |
First Published: | First published in Micromachines 12(6): 601 |
Publisher Policy: | Reproduced under a Creative Commons License |
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