Two-Step Lithography RTD Fabrication Process Using Air-Bridge Technology

Samanta, S. , Wang, J. and Wasige, E. (2021) Two-Step Lithography RTD Fabrication Process Using Air-Bridge Technology. Compound Semiconductor Week 2021 (CSW-2021), 09-13 May 2021.

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We report a simple two-step lithography process for double barrier quantum well (DBQW) InGaAs/AlAs resonant tunneling diode (RTD) on semi-insulating indium phosphide (InP) substrate using an air-bridge technology. The approach minimizes processing steps, and therefore the processing time as well as the required resources. It is particularly suited for material qualification of new epitaxial layer designs. DC performance comparison between the proposed process and the conventional process shows approximately same results. We expect that this novel technique will aid in the recent and continuing rapid advances in RTD technology.

Item Type:Conference or Workshop Item
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Samanta, Dr Swagata and Wang, Dr Jue
Authors: Samanta, S., Wang, J., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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