Optimization of the anodization processing for aluminum oxide gate dielectrics in ZnO thin film transistors by multivariate analysis

Gomes, T. C., Kumar, D., Fugikawa-Santos, L., Alves, N. and Kettle, J. (2019) Optimization of the anodization processing for aluminum oxide gate dielectrics in ZnO thin film transistors by multivariate analysis. ACS Combinatorial Science, 21(5), pp. 370-379. (doi: 10.1021/acscombsci.8b00195) (PMID:30892872)

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Abstract

The present study reports a two-level multivariate analysis to optimize the production of anodized aluminum oxide (Al2O3) dielectric films for zinc oxide thin-film transistors (TFTs). Fourteen performance parameters were measured and analysis of variance (ANOVA) of the combined responses has been applied to identify how the Al2O3 dielectric fabrication process influences the electrical properties of the TFTs. Using this approach, the levels for the manufacturing factors to achieve optimal overall device performance have been identified and ranked. The cross-checked analysis of the TFT performance parameters demonstrated that the appropriate control of the anodization process can have a higher impact on TFT performance than the use of traditional methods of surface treatment of the dielectric layer. Flexible electronics applications are expected to grow substantially over the next 10 years. Given the complexity and challenges of new flexible electronics components, this “multivariate” approach could be adopted more widely by the industry to improve the reliability and performance of such devices.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Kettle, Dr Jeff
Authors: Gomes, T. C., Kumar, D., Fugikawa-Santos, L., Alves, N., and Kettle, J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:ACS Combinatorial Science
Publisher:American Chemical Society
ISSN:2156-8952
ISSN (Online):2156-8944
Published Online:20 March 2019

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