Fabrication of highly transparent self-switching diodes using single layer indium tin oxide

Kettle, J., Perks, R.M. and Hoyle, R.T. (2009) Fabrication of highly transparent self-switching diodes using single layer indium tin oxide. Electronics Letters, 45(1), pp. 79-81. (doi: 10.1049/el:20092309)

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Abstract

The fabrication of a self-switching diode (SSD) from a single layer of n-type indium tin oxide [In2O3:Sn (ITO)] is reported. The material was grown using reactive thermal evaporation and nanostructured using a focused ion beam. The resultant device demonstrates strong current rectification, as well as a high threshold and breakdown voltage, owing to the higher density of states associated with the material, when compared to other reported SSD-device material. It is shown that this work could potentially lead to a range of new transparent devices based on ITO, without the need to develop high quality p-type material.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Kettle, Dr Jeff
Authors: Kettle, J., Perks, R.M., and Hoyle, R.T.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Electronics Letters
Publisher:IET
ISSN:0013-5194
ISSN (Online):1350-911X

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