Fabrication of poly(3-hexylthiophene) self-switching diodes using thermal nanoimprint lithography and argon milling

Kettle, J., Whitelegg, S., Song, A. M., Madec, M. B., Yeates, S., Turner, M. L., Kotacka, L. and Kolarik, V. (2009) Fabrication of poly(3-hexylthiophene) self-switching diodes using thermal nanoimprint lithography and argon milling. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(6), pp. 2801-2804. (doi: 10.1116/1.3253606)

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Abstract

In this article, the fabrication of poly(3-hexylthiophene) self-switching diodes (SSDs) is described. The unique design of the SSD enables it to be fabricated from a single layer of semiconductor material with a single lithographic step using nanoimprint lithography combined with argon milling. The resultant device morphology showed good uniformity and the SSDs exhibited pronounced current rectification and wide working voltage range.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Kettle, Dr Jeff
Authors: Kettle, J., Whitelegg, S., Song, A. M., Madec, M. B., Yeates, S., Turner, M. L., Kotacka, L., and Kolarik, V.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Publisher:American Institute of Physics
ISSN:1071-1023
ISSN (Online):2166-2754
Published Online:03 December 2009

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