Polythiophene-based field-effect transistors with enhanced air stability

Sun, Y., Lu, X., Lin, S., Kettle, J., Yeates, S. G. and Song, A. (2010) Polythiophene-based field-effect transistors with enhanced air stability. Organic Electronics, 11(2), pp. 351-355. (doi: 10.1016/j.orgel.2009.10.019)

Full text not currently available from Enlighten.

Abstract

Organic field-effect transistors (OFETs) based on regioregular poly(3-hexyl-thiophene) (P3HT) have been demonstrated with improved ambient-air stability. Substrates of untreated SiO2, octadecyltrichlorosilane (OTS)-treated SiO2, and SiO2 coated with a thin layer of polymethylmethacrylate (PMMA) were compared in terms of OFET electric performance and air stability. We are able to show virtually no change in transistor on/off ratio over a 3-day period in ambient air in OFETs fabricated on SiO2-PMMA substrates. We also studied devices based on OTS-treated PMMA interface. By analyzing the surface morphology, possible mechanisms of the enhanced air stability are discussed.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Kettle, Dr Jeff
Authors: Sun, Y., Lu, X., Lin, S., Kettle, J., Yeates, S. G., and Song, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Organic Electronics
Publisher:Elsevier
ISSN:1566-1199
ISSN (Online):1878-5530
Published Online:30 October 2009

University Staff: Request a correction | Enlighten Editors: Update this record