Optimisation of the material properties of indium tin oxide layers for use in organic photovoltaics

Doggart, P., Bristow, N. and Kettle, J. (2014) Optimisation of the material properties of indium tin oxide layers for use in organic photovoltaics. Journal of Applied Physics, 116(10), 103103. (doi: 10.1063/1.4895552)

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Abstract

The influence of indium tin oxide [(In2O3:Sn), ITO] material properties on the output performance of organic photovoltaic (OPV) devices has been modelled and investigated. In particular, the effect of altering carrier concentration (n), thickness (t), and mobility (μe) in ITO films and their impact on the optical performance, parasitic resistances and overall efficiency in OPVs was studied. This enables optimal values of these parameters to be calculated for solar cells made with P3HT:PC61BM and PCPDTBT:PC71BM active layers. The optimal values of n, t and μe are not constant between different OPV active layers and depend on the absorption spectrum of the underlying active layer material system. Consequently, design rules for these optimal values as a function of donor bandgap in bulk-heterojunction active layers have been formulated.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Kettle, Dr Jeff
Authors: Doggart, P., Bristow, N., and Kettle, J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Applied Physics
Publisher:American Institute of Physics
ISSN:0021-8979
ISSN (Online):1089-7550
Published Online:11 September 2014

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