Ge-on-Si Based Mid-infrared Plasmonics

Frigerio, J. et al. (2021) Ge-on-Si Based Mid-infrared Plasmonics. In: Silicon Photonics XVI, 06-12 Mar 2021, 116910M. (doi:10.1117/12.2576175)

[img] Text
236498.pdf - Published Version

572kB

Abstract

In the last decade, silicon photonics has undergone an impressive development driven by an increasing number of technological applications. Plasmonics has not yet made its way to the microelectronic industry, mostly because of the lack of compatibility of typical plasmonic materials with foundry processes. In this framework, we have developed a plasmonic platform based on heavily n-doped Ge grown on silicon substrates. We developed growth protocols to reach n-doping levels exceeding 1020 cm-3, allowing us to tune the plasma wavelength of Ge in the 3-15 μm range. The plasmonic resonances of Ge-on-Si nanoantennas have been predicted by simulations, confirmed by experimental spectra and exploited for molecular sensing. Our work represents a benchmark for group-IV mid-IR plasmonics.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas and Millar, Dr Ross and Gallacher, Dr Kevin
Authors: Frigerio, J., Baldassarre, L., Pellegrini, G., Fischer, M. P., Gallacher, K., Millar, R. W., Ballabio, A., Brida, D., Isella, G., Napolitani, E., Paul, D. W., Ortolani, M., Biagioni, P., Reed, G. T., and Knights, A. P.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:0277-786X
Copyright Holders:Copyright © 2021 SPIE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

University Staff: Request a correction | Enlighten Editors: Update this record