THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures

Stark, D. et al. (2021) THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures. Applied Physics Letters, 118(10), 101101. (doi: 10.1063/5.0041327)

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We report electroluminescence originating from L-valley transitions in n-type Ge/Si0.15Ge0.85 quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of Δf/f≈0.2. Three strain-compensated heterostructures, grown on a Si substrate by ultrahigh vacuum chemical vapor deposition, have been investigated. The design is based on a single quantum well active region employing a vertical optical transition, and the observed spectral features are well described by non-equilibrium Green's function calculations. The presence of two peaks highlights a suboptimal injection in the upper state of the radiative transition. Comparison of the electroluminescence spectra with a similar GaAs/AlGaAs structure yields one order of magnitude lower emission efficiency.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Mirza, Dr Muhammad M A and Paul, Professor Douglas
Authors: Stark, D., Mirza, M., Persichetti, L., Montanari, M., Markmann, S., Beck, M., Grange, T., Birner, S., Virgilio, M., Ciano, C., Ortolani, M., Corley, C., Capellini, G., Di Gaspare, L., De Seta, M., Paul, D. J., Faist, J., and Scalari, G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN (Online):1077-3118
Copyright Holders:Copyright © 2021 The Authors
First Published:First published in Applied Physics Letters 118(10): 101101
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
301516Far-infrared Lasers Assembled using SiliconDouglas PaulEuropean Commission (EC)766719ENG - Electronics & Nanoscale Engineering