Stark, D. et al. (2021) THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures. Applied Physics Letters, 118(10), 101101. (doi: 10.1063/5.0041327)
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Abstract
We report electroluminescence originating from L-valley transitions in n-type Ge/Si0.15Ge0.85 quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of Δf/f≈0.2. Three strain-compensated heterostructures, grown on a Si substrate by ultrahigh vacuum chemical vapor deposition, have been investigated. The design is based on a single quantum well active region employing a vertical optical transition, and the observed spectral features are well described by non-equilibrium Green's function calculations. The presence of two peaks highlights a suboptimal injection in the upper state of the radiative transition. Comparison of the electroluminescence spectra with a similar GaAs/AlGaAs structure yields one order of magnitude lower emission efficiency.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Mirza, Dr Muhammad M A and Paul, Professor Douglas |
Authors: | Stark, D., Mirza, M., Persichetti, L., Montanari, M., Markmann, S., Beck, M., Grange, T., Birner, S., Virgilio, M., Ciano, C., Ortolani, M., Corley, C., Capellini, G., Di Gaspare, L., De Seta, M., Paul, D. J., Faist, J., and Scalari, G. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Applied Physics Letters |
Publisher: | AIP Publishing |
ISSN: | 0003-6951 |
ISSN (Online): | 1077-3118 |
Copyright Holders: | Copyright © 2021 The Authors |
First Published: | First published in Applied Physics Letters 118(10): 101101 |
Publisher Policy: | Reproduced under a Creative Commons License |
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