1.1 μm waveband tunable laser using emission-wavelength-controlled InAs quantum dots for swept-source optical coherence tomography applications

Tsuji, T., Ozaki, N., Yamauchi, S., Onoue, K., Watanabe, E., Ohsato, H., Ikeda, N., Sugimoto, Y., Childs, D. T.D. and Hogg, R. A. (2021) 1.1 μm waveband tunable laser using emission-wavelength-controlled InAs quantum dots for swept-source optical coherence tomography applications. Japanese Journal of Applied Physics, 60(SB), SBBE02. (doi: 10.35848/1347-4065/abe5bc)

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Publisher's URL: https://doi.org/10.35848/1347-4065/abe5bc

Abstract

In this study, an optical gain chip using emission-wavelength-controlled self-assembled InAs quantum dots (QDs) was developed for swept-source optical coherence tomography (SS-OCT) applications. The optical characterizations indicated that the QDs emission wavelength and optical gain spectra were controlled in the 1.1μm waveband by optimizing the QDs growth conditions. This waveband is useful for obtaining a large imaging depth of OCT because of an optimal balance between absorption and scattering in biological samples. In addition, continuous tunable lasing in the waveband was achieved by introducing the QD-based gain chip into a grating-coupled external cavity. This tunable laser was introduced into an SS-OCT setup, and the point spread function (PSF) was evaluated. The PSF position was observed to vary according to the optical path length differences. These results demonstrate the feasibility of the application of emission-wavelength-controlled QDs for SS-OCT.

Item Type:Articles
Additional Information:This work was partly supported by JSPS KAKENHI (Grant Nos. 16H03858, 16KK0130, and 20H02183) and the Consortium of Higher Education Institutions in Wakayama. The QD gain chip fabrications were supported by the NIMS Nanofabrication Platform in the Nanotechnology Platform Project” sponsored by the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Childs, Dr David and Hogg, Professor Richard
Authors: Tsuji, T., Ozaki, N., Yamauchi, S., Onoue, K., Watanabe, E., Ohsato, H., Ikeda, N., Sugimoto, Y., Childs, D. T.D., and Hogg, R. A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Japanese Journal of Applied Physics
Publisher:IOP Publishing
ISSN:0021-4922
ISSN (Online):1347-4065
Published Online:26 February 2021
Copyright Holders:Copyright © 2021 The Japan Society of Applied Physics
First Published:First published in Japanese Journal of Applied Physics 60(SB): SBBE02
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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