Scaling-aware TCAD Parameter Extraction Methodology for Mobility Prediction in Tri-gate Nanowire Transistors

Medina-Bailon, C., Dutta, T. , Klüpfel, S., Georgiev, V. and Asenov, A. (2019) Scaling-aware TCAD Parameter Extraction Methodology for Mobility Prediction in Tri-gate Nanowire Transistors. In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. 2019, ISBN 9781728109404 (doi:10.1109/SISPAD.2019.8870556)

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Abstract

In the simulation framework for the study of aggressively scaled CMOS transistors, it is mandatory to capture the dependence of the model parameters on the physical structure of the devices in order to perform predictive device simulations. TCAD models typically have tunable parameters to characterize physical phenomena that ultimately determine different measurable electrical quantities. In this work, we extract the density gradient quantum correction parameters and Monte Carlo scattering parameters in order to fit the C-V characteristics and the low field mobility to experimental data in the case of Tri-gate nanowire transistors, which are of high importance for the semiconductor industry. Once the relevant parameters are calibrated, we have obtained a good agreement between the experimentally measured mobility and the predictions from the Monte Carlo module of the Synopsys TCAD tool Garand.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Dutta, Dr Tapas and Asenov, Professor Asen and Georgiev, Dr Vihar
Authors: Medina-Bailon, C., Dutta, T., Klüpfel, S., Georgiev, V., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modeling Group
ISSN:1946-1577
ISBN:9781728109404

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