Schrödinger Equation Based Quantum Corrections in Drift-Diffusion: A Multiscale Approach

Dutta, T. , Medina-Bailon, C., Carrillo-Nunez, H., Badami, O., Georgiev, V. and Asenov, A. (2019) Schrödinger Equation Based Quantum Corrections in Drift-Diffusion: A Multiscale Approach. In: 2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), Stockholm, Sweden, 27-30 Oct 2019, ISBN 9781728126371 (doi:10.1109/NMDC47361.2019.9084010)

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Abstract

In this work, we report the development of a 3D drift-diffusion (DD) simulator for ultrascaled transistors with quantum corrections based on the solution of the Schrödinger equation. In a novel multi-scale simulation approach we use effective masses from tight-binding calculations, carrier mobility from the semi-classical Kubo-Greenwood formalism, and quantum corrections based on self-consistent Poisson-Schrödinger solution. This scheme has been implemented into the University of Glasgow TCAD tool called NESS (Nano Electronic Simulation Software). The approach is validated with respect to non-equilibrium Green's function (NEGF) simulations in the case of nanowire field effect transistors with different cross-sectional shapes.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Dutta, Dr Tapas and Carrillo-Nunez, Dr Hamilton and Badami, Mr Oves and Georgiev, Dr Vihar
Authors: Dutta, T., Medina-Bailon, C., Carrillo-Nunez, H., Badami, O., Georgiev, V., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modeling Group
ISSN:2378-377X
ISBN:9781728126371
Published Online:13 May 2020
Copyright Holders:Copyright © 2019 IEEE
First Published:First published in 2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC)
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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