Improved quality of InSb-on-insulator microstructures by flash annealing into melt

Menon, H., Södergren, L., Athle, R., Johansson, J., Steer, M., Thayne, I. and Borg, M. (2021) Improved quality of InSb-on-insulator microstructures by flash annealing into melt. Nanotechnology, 32(16), 165602. (doi: 10.1088/1361-6528/abd656) (PMID:33361572)

Abstract

Monolithic integration of III–V semiconductors with Silicon technology has instigated a wide range of new possibilities in the semiconductor industry, such as combination of digital circuits with optical sensing and high-frequency communication. A promising CMOS compatible integration process is rapid melt growth (RMG) that can yield high quality single crystalline material at low cost. This paper represents the study on ultra-thin InSb-on-insulator microstructures integrated on a Si platform by a RMG-like process. We utilize flash lamp annealing (FLA) to melt and recrystallize the InSb material for an ultra-short duration (milliseconds), to reduce the thermal budget necessary for integration with Si technology. We compare the result from FLA to regular rapid thermal annealing (seconds). Recrystallized InSb was characterized using electron back scatter diffraction which indicate a transition from nanocrystalline structure to a crystal structure with grain sizes exceeding 1 μm after the process. We further see a 100× improvement in electrical resistivity by FLA annealed sample when compared to the as-deposited InSb with an average Hall mobility of 3100 cm2 V−1 s−1 making this a promising step towards realizing monolithic mid-infrared detectors and quantum devices based on InSb.

• Item Type: Articles
• Additional Information: This work is supported by Swedish Foundation for Strategic Research, Nano Lund, Craaford Foundation and Royal Physiographic Society of Lund.
• Keywords: Paper, Materials: synthesis or self-assembly, Insb, rapid melt growth, flash lamp anneal, Hall mobility, heterointegration.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Thayne, Prof Iain and Steer, Dr Matthew
• Authors: Menon, H., Södergren, L., Athle, R., Johansson, J., Steer, M., Thayne, I., and Borg, M.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering; College of Science and Engineering > School of Engineering > James Watt Nanofabrication Centre
• Journal Name: Nanotechnology
• Publisher: IOP Publishing
• ISSN: 0957-4484
• ISSN (Online): 1361-6528
• Copyright Holders: Copyright © 2021 The Authors
• First Published: First Published in Nanotechnology 32:165602
• Publisher Policy: Reproduced Under A Creative Commons Licence