Crawford, K. G. , Maini, I., Macdonald, D. A. and Moran, D. A.J. (2021) Surface transfer doping of diamond: a review. Progress in Surface Science, 96(1), 100613. (doi: 10.1016/j.progsurf.2021.100613)
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Abstract
Ultra-wide bandgap materials show great promise as a solution to some of the limitations of current state of the art semiconductor technology. Among these, diamond has exhibited great potential for use in high-power, high-temperature electronics, as well as sensing and quantum applications. Yet, significant challenges associated with impurity doping of the constrained diamond lattice remain a primary impediment towards the development of diamond-based electronic devices. An alternative approach, used with continued success to unlock the use of diamond for semiconductor applications, has been that of ‘surface transfer doping’ - a process by which intrinsically insulating diamond surfaces can be made semiconducting without the need for traditional impurity doping. Here, we present a review of progress in surface transfer doping of diamond, both a history and current outlook of this highly exploitable attribute.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | MACDONALD, DAVID and Maini, Ms Isha and Moran, Professor David and Crawford, Mr Kevin |
Authors: | Crawford, K. G., Maini, I., Macdonald, D. A., and Moran, D. A.J. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Progress in Surface Science |
Publisher: | Elsevier |
ISSN: | 0079-6816 |
ISSN (Online): | 1878-4240 |
Published Online: | 04 February 2021 |
Copyright Holders: | Copyright © 2021 The Authors |
First Published: | First published in Progress in Surface Science 96(1): 100613 |
Publisher Policy: | Reproduced under a Creative Commons License |
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